Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to b...
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| Дата: | 2013 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117663 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117663 |
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dspace |
| spelling |
irk-123456789-1176632017-05-27T03:05:53Z Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier. 2013 Article Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 73.40.-c, 73.61.Ga, 78.30.Fs http://dspace.nbuv.gov.ua/handle/123456789/117663 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by
using the hot-wall epitaxy technique. The growth details are presented. The carrier
transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited
current. The photovoltaic response in the long-wave infrared region with the half-peak
cut-off wavelength ranged from 8.0 to 9.0 m was observed in these heterojunctions for
the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier. |
| format |
Article |
| author |
Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. |
| spellingShingle |
Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tetyorkin, V.V. Sukach, A.V. Tkachuk, A.I. Movchan, S.P. |
| author_sort |
Tetyorkin, V.V. |
| title |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_short |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_full |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_fullStr |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_full_unstemmed |
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions |
| title_sort |
injection current and infrared photosensitivity in isotype p-pbte/p-cdte heterojunctions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2013 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117663 |
| citation_txt |
Injection current and infrared photosensitivity
in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:30:19Z |
| last_indexed |
2023-10-18T20:30:19Z |
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