Radiative recombination in initial and electron-irradiated GaP crystals
Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescenc...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117739 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Radiative recombination in initial and electron-irradiated GaP crystals / O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 30-35. — Бібліогр.: 24 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied
at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg
and N. Emission spectra were analyzed as dependent on the impurity content. Found was the electron irradiation influence on the luminescence intensity and its mechanism.
Radiative recombination intensity was shown to recover efficiently within the
temperature range 200-600 ºC, and the main annealing stage being at 200-400 ºC. |
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