The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

за авторством Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Опубліковано 2011

Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

за авторством Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
Опубліковано 2002

Peculiarities of optical absorption near-edge in irradiated GaP:Te

за авторством Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Опубліковано 2010

The radiation hardness of pulled silicon doped with germanium

за авторством Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Опубліковано 2007

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

за авторством Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Опубліковано 2007

Peculiarities of neutron irradiation influence on GaP light-emitting structures

за авторством Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано 2009

Radiation influence on characteristics of GaP light emitting diodes

за авторством Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Опубліковано 2009

Radiative recombination in initial and electron-irradiated GaP crystals

за авторством Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Опубліковано 2010

Influence of structural defects on photoconductivity of zinc diphosphide

за авторством Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Опубліковано 2001

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

за авторством Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Опубліковано 2005

Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers

за авторством Litovchenko, P.G., Pavlovska, N.T., Pavlovskyy, Yu.V., Ugrin, Yu.O., Luka, G., Ostrovskyy, I.P.
Опубліковано 2014

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs

за авторством Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.
Опубліковано 2003

Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

за авторством Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Опубліковано 2016

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

за авторством Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Опубліковано 2004

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

за авторством Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Опубліковано 2017

Seebeck’s effect in p-SiGe whisker samples

за авторством Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Опубліковано 2011

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

за авторством Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Опубліковано 2003

Semiconductor sensors for dosimetry of epithermal neutrons

за авторством Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.
Опубліковано 1999

Influence of neutron irradiation on elctrooptical and structural properties of silicon

за авторством Groza, A.A., Venger, E.F., Varnina, V.I., Holiney, R.Yu., Litovchenko, P.G., Matveeva, L.A., Litovchenko, A.P., Sugakov, V.I., Shmatko, G.G.
Опубліковано 2001

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

за авторством Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Опубліковано 2001