Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

von Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
Veröffentlicht 2002

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

von Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Veröffentlicht 2011

Peculiarities of optical absorption near-edge in irradiated GaP:Te

von Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Veröffentlicht 2010

The radiation hardness of pulled silicon doped with germanium

von Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Veröffentlicht 2007

Peculiarities of neutron irradiation influence on GaP light-emitting structures

von Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht 2009

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Veröffentlicht 2007

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Veröffentlicht 2007

Radiation influence on characteristics of GaP light emitting diodes

von Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Veröffentlicht 2009

Radiative recombination in initial and electron-irradiated GaP crystals

von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht 2010

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

von Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Veröffentlicht 2005

Influence of structural defects on photoconductivity of zinc diphosphide

von Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Veröffentlicht 2001

Influence of structural defects on photoconductivity of zinc diphosphide

von Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Veröffentlicht 2001

Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers

von Litovchenko, P.G., Pavlovska, N.T., Pavlovskyy, Yu.V., Ugrin, Yu.O., Luka, G., Ostrovskyy, I.P.
Veröffentlicht 2014

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs

von Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.
Veröffentlicht 2003

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

von Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Veröffentlicht 2017

Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

von Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Veröffentlicht 2016

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Veröffentlicht 2004

Seebeck’s effect in p-SiGe whisker samples

von Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Veröffentlicht 2011

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

von Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Veröffentlicht 2003

Основні положення концепції нового багато цільового дослідницького ядерного реактора

von Vishnevsky, I., Davidovsky, V., Grinik, E., Lysenko, M., Litovchenko, P., Lobach, Yu., Makarovsky, V., Pavlovich, V., Svarichevskaya, E., Trishin, V., Shevel, V.
Veröffentlicht 2006