Харвестер відкритої науки НАН України

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

von Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

von Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Peculiarities of optical absorption near-edge in irradiated GaP:Te

von Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Tartachnyk, V.
Veröffentlicht in Functional Materials (2010)

Радиационная модификация структурной сетки халькогенидного стекла

von Kavetskyy, T. S., Shpotyuk, O. I., Litovchenko, P. G., Tsmots, V. M.
Veröffentlicht 2008

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

von Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Peculiarities of neutron irradiation influence on GaP light-emitting structures

von Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

The radiation hardness of pulled silicon doped with germanium

von Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

Radiation influence on characteristics of GaP light emitting diodes

von Borzakovskyj, A., Gontaruk, O., Kochkin, V., Litovchenko, P., Opilat, V., Petrenko, I., Tartachnyk, V.
Veröffentlicht in Functional Materials (2009)

Radiative recombination in initial and electron-irradiated GaP crystals

von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Influence of structural defects on photoconductivity of zinc diphosphide

von Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

von Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Veröffentlicht in Functional Materials (2005)

Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers

von Litovchenko, P.G., Pavlovska, N.T., Pavlovskyy, Yu.V., Ugrin, Yu.O., Luka, G., Ostrovskyy, I.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs

von Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.
Veröffentlicht in Физика низких температур (2003)

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon

von Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Veröffentlicht in Вопросы атомной науки и техники (2017)

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

von Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors

von Gaidar, G.P., Berdnichenko, S.V., Vorobyov, V.G., Kochkin, V.I., Lastovetskiy, V.F., Litovchenko, P.G.
Veröffentlicht in Вопросы атомной науки и техники (2016)

Seebeck’s effect in p-SiGe whisker samples

von Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

Основні положення концепції нового багато цільового дослідницького ядерного реактора

von Vishnevsky, I., Davidovsky, V., Grinik, E., Lysenko, M., Litovchenko, P., Lobach, Yu., Makarovsky, V., Pavlovich, V., Svarichevskaya, E., Trishin, V., Shevel, V.
Veröffentlicht 2006

Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics

von Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ja., Tartachnyk, V.P., Pinkovs'ka, M.B., Shakhov, O.P., Shapar, V.M.
Veröffentlicht in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Радиационная стойкость нитевидных кристаллов SiGe, используемых для сенсоров фи­зи­чес­ких величин...

von Druzhinin, A. A., Ostrovskiy, I. P., Khoverko, Yu. N., Litovchenko, P. G., Pavlovska, N. T., Pavlovskiy, Yu. V., Tsmots, V. M., Povarchuk, V. Yu.
Veröffentlicht 2011