Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon aniso...
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| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117772 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117772 |
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dspace |
| spelling |
irk-123456789-1177722017-05-27T03:05:20Z Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon anisotropic etching was optimized, too. This technology has been used for the fabrication of high-quality diffraction gratings on Si (100) surface with symmetric triangular and trapezium grooves and two-dimentional periodic structures. Relief parameters and diffraction properties of the obtained structures and their dependences on etching time were determined 2007 Article Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.70.L, 42.40.Ht, 78.20.e http://dspace.nbuv.gov.ua/handle/123456789/117772 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Application of inorganic photoresist based on chalcogenide films for
fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
a silicon surface was developed, and silicon anisotropic etching was optimized, too. This
technology has been used for the fabrication of high-quality diffraction gratings on Si
(100) surface with symmetric triangular and trapezium grooves and two-dimentional
periodic structures. Relief parameters and diffraction properties of the obtained structures
and their dependences on etching time were determined |
| format |
Article |
| author |
Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| spellingShingle |
Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Min’ko, V.I. Shepeliavyi, P.E. Indutnyy, I.Z. Litvin, O.S. |
| author_sort |
Min’ko, V.I. |
| title |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_short |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_full |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_fullStr |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_full_unstemmed |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| title_sort |
fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117772 |
| citation_txt |
Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:30:35Z |
| last_indexed |
2023-10-18T20:30:35Z |
| _version_ |
1796150388012875776 |