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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118027 |
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