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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118027 |
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irk-123456789-1180272017-05-29T03:02:33Z Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting from use of amorphous TiBx layers as barrier material. A phase transition in them occurs at a temperature over 1000 °С. It was determined that use of TiBx as an antidiffusion layer in Au-TiBx-AuGe-n-GaAs ohmic contacts to Gunn diodes increases their service life as compared to the traditional Au-AuGe-n-GaAs ohmic contact. 2003 Article Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 85.30.Fg http://dspace.nbuv.gov.ua/handle/123456789/118027 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
| description |
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting from use of amorphous TiBx layers as barrier material. A phase transition in them occurs at a temperature over 1000 °С. It was determined that use of TiBx as an antidiffusion layer in Au-TiBx-AuGe-n-GaAs ohmic contacts to Gunn diodes increases their service life as compared to the traditional Au-AuGe-n-GaAs ohmic contact. |
| format |
Article |
| author |
Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| spellingShingle |
Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ivanov, V.N. Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| author_sort |
Ivanov, V.N. |
| title |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_short |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_full |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_fullStr |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_full_unstemmed |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices |
| title_sort |
heat-resistant ohmic and barrier contacts for gaas-based microwave devices |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118027 |
| citation_txt |
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT ivanovvn heatresistantohmicandbarriercontactsforgaasbasedmicrowavedevices AT konakovarv heatresistantohmicandbarriercontactsforgaasbasedmicrowavedevices AT mileninvv heatresistantohmicandbarriercontactsforgaasbasedmicrowavedevices AT stovpovoima heatresistantohmicandbarriercontactsforgaasbasedmicrowavedevices |
| first_indexed |
2023-10-18T20:31:10Z |
| last_indexed |
2023-10-18T20:31:10Z |
| _version_ |
1796150412214009856 |