Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting...
Gespeichert in:
| Datum: | 2003 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/118027 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices / V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 311-315. — Бібліогр.: 7 назв. — англ. |