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Investigation of superlattice structure parameters using quasi-forbidden reflections

We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer structure parameters and sublayer thickness. The effect of irregularity of su...

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Main Authors: Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118048
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spelling irk-123456789-1180482017-05-29T03:03:01Z Investigation of superlattice structure parameters using quasi-forbidden reflections Kladko, V.P. Datsenko, L.I. Korchovyi, A.A. Machulin, V.F. Lytvyn, P.M. Shalimov, A.V. Kuchuk, A.V. Kogutyuk, P.P. We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer structure parameters and sublayer thickness. The effect of irregularity of superlattice transition region on X-ray diffraction reflection curves and elastic strains in layers was studied. 2003 Article Investigation of superlattice structure parameters using quasi-forbidden reflections / V.P. Kladko, L.I. Datsenko, A.A. Korchovyi, V.F. Machulin, P.M. Lytvyn, A.V. Shalimov, A.V. Kuchuk, P.P. Kogutyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 392-396. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 68.65.Cd http://dspace.nbuv.gov.ua/handle/123456789/118048 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer structure parameters and sublayer thickness. The effect of irregularity of superlattice transition region on X-ray diffraction reflection curves and elastic strains in layers was studied.
format Article
author Kladko, V.P.
Datsenko, L.I.
Korchovyi, A.A.
Machulin, V.F.
Lytvyn, P.M.
Shalimov, A.V.
Kuchuk, A.V.
Kogutyuk, P.P.
spellingShingle Kladko, V.P.
Datsenko, L.I.
Korchovyi, A.A.
Machulin, V.F.
Lytvyn, P.M.
Shalimov, A.V.
Kuchuk, A.V.
Kogutyuk, P.P.
Investigation of superlattice structure parameters using quasi-forbidden reflections
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kladko, V.P.
Datsenko, L.I.
Korchovyi, A.A.
Machulin, V.F.
Lytvyn, P.M.
Shalimov, A.V.
Kuchuk, A.V.
Kogutyuk, P.P.
author_sort Kladko, V.P.
title Investigation of superlattice structure parameters using quasi-forbidden reflections
title_short Investigation of superlattice structure parameters using quasi-forbidden reflections
title_full Investigation of superlattice structure parameters using quasi-forbidden reflections
title_fullStr Investigation of superlattice structure parameters using quasi-forbidden reflections
title_full_unstemmed Investigation of superlattice structure parameters using quasi-forbidden reflections
title_sort investigation of superlattice structure parameters using quasi-forbidden reflections
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118048
citation_txt Investigation of superlattice structure parameters using quasi-forbidden reflections / V.P. Kladko, L.I. Datsenko, A.A. Korchovyi, V.F. Machulin, P.M. Lytvyn, A.V. Shalimov, A.V. Kuchuk, P.P. Kogutyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 392-396. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:13Z
last_indexed 2023-10-18T20:31:13Z
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