Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions

Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature...

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Дата:2004
Автори: Belyaev, A.E., Foxon, C.T., Novikov, S.V., Makarovsky, O., Eaves, L., Kappers, M.J., Barnard, J.S., Humphreys, C.J., Danylyuk, S.V., Vitusevich, S.A., Naumov, A.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118170
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118170
record_format dspace
spelling irk-123456789-1181702017-05-30T03:05:09Z Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions Belyaev, A.E. Foxon, C.T. Novikov, S.V. Makarovsky, O. Eaves, L. Kappers, M.J. Barnard, J.S. Humphreys, C.J. Danylyuk, S.V. Vitusevich, S.A. Naumov, A.V. Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures. 2004 Article Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 85.30.Mn, 85.30.Kk http://dspace.nbuv.gov.ua/handle/123456789/118170 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance (capacitance-voltage, C–V) spectroscopy measurements were performed at the temperature range from 4.2 to 300 K. It has been found that measured characteristics of DB-RTD have complex nonlinear behavior and reveal the current discontinuities of I–V curves. The features can be explained by the existence of polarization fields and interface defects. These effects strongly influence on the potential profile of the DB-RTD heterostructures. To understand physics of the processes, numerical simulations of the given structures, using a model based on real-time Green’s functions, have been performed. Comparative analysis of experimental and numerical data showed that the current instability and nonlinearity of characteristics of the nitride based DB-RTD can be connected with trapping the electrons onto interfacial and dislocation states in these heterostructures.
format Article
author Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
spellingShingle Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Belyaev, A.E.
Foxon, C.T.
Novikov, S.V.
Makarovsky, O.
Eaves, L.
Kappers, M.J.
Barnard, J.S.
Humphreys, C.J.
Danylyuk, S.V.
Vitusevich, S.A.
Naumov, A.V.
author_sort Belyaev, A.E.
title Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_short Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_full Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_fullStr Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_full_unstemmed Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
title_sort current instabilities in resonant tunnelling diodes based on gan/aln heterojunctions
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/118170
citation_txt Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions / A.E. Belyaev, C.T. Foxon, S.V. Novikov, O. Makarovsky, L. Eaves, M.J. Kappers, J.S. Barnard, C.J. Humphreys, S.V. Danylyuk, S.A. Vitusevich, A.V. Naumov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 175-179. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:30Z
last_indexed 2023-10-18T20:31:30Z
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