Peculiarities of neutron irradiation influence on GaP light-emitting structures
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their captur...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118874 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
methods. The observed emission intensity degradation is related with two factors:
1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
concentration, which is caused by their capture by radiation defects. Study of currentvoltage
characteristics at 77 K by highly precession methods has revealed the appearance
of N-shaped negative differential region caused by carrier tunneling onto deep levels in
quantum wells, which might exist in initial and irradiated p-n structures. In some cases,
improvement of current-voltage characteristics after neutron irradiation is observed. An
assumption is made about the radiation-stimulated origin of this effect. |
|---|