Peculiarities of neutron irradiation influence on GaP light-emitting structures
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their captur...
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| Дата: | 2009 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118874 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118874 |
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dspace |
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irk-123456789-1188742017-06-01T03:06:06Z Peculiarities of neutron irradiation influence on GaP light-emitting structures Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their capture by radiation defects. Study of currentvoltage characteristics at 77 K by highly precession methods has revealed the appearance of N-shaped negative differential region caused by carrier tunneling onto deep levels in quantum wells, which might exist in initial and irradiated p-n structures. In some cases, improvement of current-voltage characteristics after neutron irradiation is observed. An assumption is made about the radiation-stimulated origin of this effect. 2009 Article Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118874 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
methods. The observed emission intensity degradation is related with two factors:
1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
concentration, which is caused by their capture by radiation defects. Study of currentvoltage
characteristics at 77 K by highly precession methods has revealed the appearance
of N-shaped negative differential region caused by carrier tunneling onto deep levels in
quantum wells, which might exist in initial and irradiated p-n structures. In some cases,
improvement of current-voltage characteristics after neutron irradiation is observed. An
assumption is made about the radiation-stimulated origin of this effect. |
| format |
Article |
| author |
Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| spellingShingle |
Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. Peculiarities of neutron irradiation influence on GaP light-emitting structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_sort |
Litovchenko, P. |
| title |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_short |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_full |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_fullStr |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_full_unstemmed |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_sort |
peculiarities of neutron irradiation influence on gap light-emitting structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118874 |
| citation_txt |
Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:33:12Z |
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2023-10-18T20:33:12Z |
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