Effect of the charge state of traps on the transport current in the SiC/Si heterostructure

• Дата: 2000
• Автори: Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121165
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ.

Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC laye...