Effect of the charge state of traps on the transport current in the SiC/Si heterostructure
Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC laye...
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| Дата: | 2000 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121165 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121165 |
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dspace |
| spelling |
irk-123456789-1211652017-06-14T03:06:18Z Effect of the charge state of traps on the transport current in the SiC/Si heterostructure Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC layer increases the forward current due to reduction of the potential barrier for holes. In the range of forward biases 0.5 – 0.8 V the current is controlled by variable-range hopping of holes in the amorphous SiC according to the Mott's mechanism. At higher voltages the dominant mechanism controlling the current becomes the hole tunneling across the triangular barrier in the amorphous-crystalline semiconductor interface. 2000 Article Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 73.20.Hb; 73.40.-c; 73.61.Jc. http://dspace.nbuv.gov.ua/handle/123456789/121165 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC layer increases the forward current due to reduction of the potential barrier for holes. In the range of forward biases 0.5 – 0.8 V the current is controlled by variable-range hopping of holes in the amorphous SiC according to the Mott's mechanism. At higher voltages the dominant mechanism controlling the current becomes the hole tunneling across the triangular barrier in the amorphous-crystalline semiconductor interface. |
| format |
Article |
| author |
Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| spellingShingle |
Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. Effect of the charge state of traps on the transport current in the SiC/Si heterostructure Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| author_sort |
Lysenko, V.S. |
| title |
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_short |
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_full |
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_fullStr |
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_full_unstemmed |
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_sort |
effect of the charge state of traps on the transport current in the sic/si heterostructure |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121165 |
| citation_txt |
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT lysenkovs effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure AT tyagulskiip effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure AT gomeniukyv effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure AT osiyukin effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure |
| first_indexed |
2023-10-18T20:38:47Z |
| last_indexed |
2023-10-18T20:38:47Z |
| _version_ |
1796150741258207232 |