Balance model for contactless chemo-mechanical polishing of wafers

Balance model for contactless chemo-mechanical polishing of wafers

We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, convection and chemical flows is used to describe processes that are proceeding i...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2002
Автори: Grigoriev, N.N., Kravetsky, M.Yu., Paschenko, G.A., Sypko, S.A., Fomin, A.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121333
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Цитувати:Balance model for contactless chemo-mechanical polishing of wafers / N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 332-336. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121333
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spelling irk-123456789-1213332017-06-15T03:05:13Z Balance model for contactless chemo-mechanical polishing of wafers Grigoriev, N.N. Kravetsky, M.Yu. Paschenko, G.A. Sypko, S.A. Fomin, A.V. We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, convection and chemical flows is used to describe processes that are proceeding in the stationary case. The analytical expressions are obtained that relate polishing rate and surface form for processed material to the physical parameters of the proceeding processes. It was found that macrorelief of the processed surface depends not only on the velocity of polishing plate motion but also on the gap between the processed wafer and polishing plate, as well as active component diffusion in the etching solution. One would expect that, at processing conditions discussed, the surface form is the same for different materials, whatever the active component concentration and chemical reaction constant. The polishing rate substantially depends on the concentration of the etchant active component, chemical reaction, physical properties of sample material and etching liquid. It is shown that the inverse rate of dissolution is the sum of inverse limiting rates of chemical, diffusion and convection stages of the process. The expressions are obtained that make it possible to optimize technological modes of polishing. 2002 Article Balance model for contactless chemo-mechanical polishing of wafers / N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 332-336. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 89.20 http://dspace.nbuv.gov.ua/handle/123456789/121333 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, convection and chemical flows is used to describe processes that are proceeding in the stationary case. The analytical expressions are obtained that relate polishing rate and surface form for processed material to the physical parameters of the proceeding processes. It was found that macrorelief of the processed surface depends not only on the velocity of polishing plate motion but also on the gap between the processed wafer and polishing plate, as well as active component diffusion in the etching solution. One would expect that, at processing conditions discussed, the surface form is the same for different materials, whatever the active component concentration and chemical reaction constant. The polishing rate substantially depends on the concentration of the etchant active component, chemical reaction, physical properties of sample material and etching liquid. It is shown that the inverse rate of dissolution is the sum of inverse limiting rates of chemical, diffusion and convection stages of the process. The expressions are obtained that make it possible to optimize technological modes of polishing.
format Article
author Grigoriev, N.N.
Kravetsky, M.Yu.
Paschenko, G.A.
Sypko, S.A.
Fomin, A.V.
spellingShingle Grigoriev, N.N.
Kravetsky, M.Yu.
Paschenko, G.A.
Sypko, S.A.
Fomin, A.V.
Balance model for contactless chemo-mechanical polishing of wafers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Grigoriev, N.N.
Kravetsky, M.Yu.
Paschenko, G.A.
Sypko, S.A.
Fomin, A.V.
author_sort Grigoriev, N.N.
title Balance model for contactless chemo-mechanical polishing of wafers
title_short Balance model for contactless chemo-mechanical polishing of wafers
title_full Balance model for contactless chemo-mechanical polishing of wafers
title_fullStr Balance model for contactless chemo-mechanical polishing of wafers
title_full_unstemmed Balance model for contactless chemo-mechanical polishing of wafers
title_sort balance model for contactless chemo-mechanical polishing of wafers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/121333
citation_txt Balance model for contactless chemo-mechanical polishing of wafers / N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 332-336. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT grigorievnn balancemodelforcontactlesschemomechanicalpolishingofwafers
AT kravetskymyu balancemodelforcontactlesschemomechanicalpolishingofwafers
AT paschenkoga balancemodelforcontactlesschemomechanicalpolishingofwafers
AT sypkosa balancemodelforcontactlesschemomechanicalpolishingofwafers
AT fominav balancemodelforcontactlesschemomechanicalpolishingofwafers
first_indexed 2023-10-18T20:39:12Z
last_indexed 2023-10-18T20:39:12Z
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