Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification o...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2002
Автори: Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121364
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Цитувати:Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1213642017-06-15T03:02:54Z Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing Litvinov, V.L. Demakov, K.D. Agueev, O.A. Svetlichny, A.M. Konakova, R.V. Lytvyn, P.M. Lytvyn, O.S. Milenin, V.V. Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film. 2002 Article Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 73.40.Ns, 73.30.+y http://dspace.nbuv.gov.ua/handle/123456789/121364 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film.
format Article
author Litvinov, V.L.
Demakov, K.D.
Agueev, O.A.
Svetlichny, A.M.
Konakova, R.V.
Lytvyn, P.M.
Lytvyn, O.S.
Milenin, V.V.
spellingShingle Litvinov, V.L.
Demakov, K.D.
Agueev, O.A.
Svetlichny, A.M.
Konakova, R.V.
Lytvyn, P.M.
Lytvyn, O.S.
Milenin, V.V.
Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Litvinov, V.L.
Demakov, K.D.
Agueev, O.A.
Svetlichny, A.M.
Konakova, R.V.
Lytvyn, P.M.
Lytvyn, O.S.
Milenin, V.V.
author_sort Litvinov, V.L.
title Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
title_short Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
title_full Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
title_fullStr Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
title_full_unstemmed Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing
title_sort evolution of structural and electrophysical parameters of ni/sic contacts at rapid thermal annealing
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/121364
citation_txt Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:16Z
last_indexed 2023-10-18T20:39:16Z
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