Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2006
Автори: Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121436
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121436
record_format dspace
spelling irk-123456789-1214362017-06-15T03:04:46Z Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation Houk, Y. Nazarov, A.N. Turchanikov, V.I. Lysenko, V.S. Andriaensen, S. Flandre, D. An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated. 2006 Article Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 85.30.Tv, 85.30.De, 81.40.Wx http://dspace.nbuv.gov.ua/handle/123456789/121436 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated.
format Article
author Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
spellingShingle Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Houk, Y.
Nazarov, A.N.
Turchanikov, V.I.
Lysenko, V.S.
Andriaensen, S.
Flandre, D.
author_sort Houk, Y.
title Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_short Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_full Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_fullStr Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_full_unstemmed Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation
title_sort characterization of charge trapping processes in fully-depleted unibond soi mosfet subjected to γ-irradiation
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121436
citation_txt Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT houky characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtogirradiation
AT nazarovan characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtogirradiation
AT turchanikovvi characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtogirradiation
AT lysenkovs characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtogirradiation
AT andriaensens characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtogirradiation
AT flandred characterizationofchargetrappingprocessesinfullydepletedunibondsoimosfetsubjectedtogirradiation
first_indexed 2023-10-18T20:39:26Z
last_indexed 2023-10-18T20:39:26Z
_version_ 1796150775361044480

Схожі ресурси