Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes

• Дата: 2016
• Автори: Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2016
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121657
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes / P.M. Romanets, A.E. Belyaev, А.V. Sachenko, N.S. Boltovets, V.V. Basanets, R.V. Konakova, V.S. Slipokurov, А.А. Khodin, V.А. Pilipenko, V.V. Shynkarenko, Ya.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 4. — С. 366-370. — Бібліогр.: 9 назв. — англ.

The method of electrophysical diagnostic of n⁺-n-n⁺ structures at the etching stage of manufacturing process of power IMPATT diodes has been proposed. A numerical method for specific contacts resistance calculation of vertical ohmic contacts with a non-uniform doping level has been developed. Vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si both before and after etching were used for experimental checking this model. It has been computed the value of contact resistance in the interface metal–n⁺ with correction of contribution of n⁺-n and n-n⁺ resistances to the total resistance. The values of total effective resistances of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si may be calculated using the Cox–Strack method. We used solutions of Laplace’s equation for computation of specific contact resistance metal–n⁺ without contribution of interfaces n⁺-n and n-n⁺. The values of specific contact resistance were ~10⁻⁶ Ohm·cm². This method allows to control the manufacture process by monitoring the changes in electrophysical properties of the structure between etching cycles.