Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis...
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| Дата: | 2017 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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НТК «Інститут монокристалів» НАН України
2017
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| Назва видання: | Functional Materials |
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| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/136789 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1367892018-06-17T03:02:52Z Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. Characterization and properties A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established. 2017 Article Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. 1027-5495 DOI: https://doi.org/10.15407/fm24.03.372 http://dspace.nbuv.gov.ua/handle/123456789/136789 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis Functional Materials |
| description |
A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established. |
| format |
Article |
| author |
Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. |
| author_facet |
Kushnir, B.V. Kovalyuk, Z.D. Katerynchuk, V.M. Netyaga, V.V. Tkachuk, I.G. |
| author_sort |
Kushnir, B.V. |
| title |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_short |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_full |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_fullStr |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_full_unstemmed |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis |
| title_sort |
layered crystals fein₂se₄, in₄se₃ and heterojunctions on their basis |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2017 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/136789 |
| citation_txt |
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. |
| series |
Functional Materials |
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2023-10-18T21:14:04Z |
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2023-10-18T21:14:04Z |
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