Hydrogen reduction of silicon tetrachloride in low temperature non-equilibrium plasma of induction RF discharge

• Дата: 2019
• Автори: Deryzemlia, A.N., Yevsiukov, A.I., Radchenko, V.I., Khizhnyak, D.A., Kryshtal, P.G., Zhuravlov, A.Yu., Shijan, A.V., Strigunovskiy, S.V., Pelypets, Yu.A., Shirokov, B.M.
• Формат: Стаття
• Мова: English
• Опубліковано: Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2019
• Назва видання: Вопросы атомной науки и техники
• Теми: Low temperature plasma and plasma technologies
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/194836
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Hydrogen reduction of silicon tetrachloride in low temperature non-equilibrium plasma of induction RF discharge / A.N. Deryzemlia, A.I. Yevsiukov, V.I. Radchenko, D.A. Khizhnyak, P.G. Kryshtal, A.Yu. Zhuravlov, A.V. Shijan, S.V. Strigunovskiy, Yu.A. Pelypets, B.M. Shirokov // Problems of atomic science and technology. — 2019. — № 1. — С. 222-224. — Бібліогр.: 3 назв. — англ.

In this work, silicon is obtained by plasma-chemical reduction of silicon tetrachloride in an argon-hydrogen low- temperature nonequilibrium plasma. It is shown that in the investigated range of process parameters, the energy cost of producing one kilogram of silicon is in the range of 150…190 kW/h with a silicon yield of ~ 85 %. This cost reduction in the plasma-chemical process is associated with the transfer of electricity directly into the gas-vapor mixture. In addition, carrying out the recovery process under nonequilibrium conditions leads to the formation of atomic hydrogen in the discharge.