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Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions on structural properties of Si:Mn and GaMnAs layers was investigated. It h...

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Bibliographic Details
Main Authors: Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.
Format: Article
Language:English
Published: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2009
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/5986
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http://dspace.nbuv.gov.ua/handle/123456789/5986

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