Pressure-induced structural transformations in Si:V and Si:V, Mn

Pressure-induced structural transformations in Si:V and Si:V, Mn

Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new resu...

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Бібліографічні деталі
Дата:2008
Автори: Misiuk, A., Barcz, A., Chow, L., Bak-Misiuk, J., Romanowski, P., Shalimov, A., Wnuk, A., Surma, B., Vanfleet, R., Prujszczyk, M.
Формат: Стаття
Мова:English
Опубліковано: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2008
Назва видання:Физика и техника высоких давлений
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/70463
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-704632014-11-07T03:02:01Z Pressure-induced structural transformations in Si:V and Si:V, Mn Misiuk, A. Barcz, A. Chow, L. Bak-Misiuk, J. Romanowski, P. Shalimov, A. Wnuk, A. Surma, B. Vanfleet, R. Prujszczyk, M. Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species. 2008 Article Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ. 0868-5924 PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am http://dspace.nbuv.gov.ua/handle/123456789/70463 en Физика и техника высоких давлений Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
format Article
author Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
spellingShingle Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
Pressure-induced structural transformations in Si:V and Si:V, Mn
Физика и техника высоких давлений
author_facet Misiuk, A.
Barcz, A.
Chow, L.
Bak-Misiuk, J.
Romanowski, P.
Shalimov, A.
Wnuk, A.
Surma, B.
Vanfleet, R.
Prujszczyk, M.
author_sort Misiuk, A.
title Pressure-induced structural transformations in Si:V and Si:V, Mn
title_short Pressure-induced structural transformations in Si:V and Si:V, Mn
title_full Pressure-induced structural transformations in Si:V and Si:V, Mn
title_fullStr Pressure-induced structural transformations in Si:V and Si:V, Mn
title_full_unstemmed Pressure-induced structural transformations in Si:V and Si:V, Mn
title_sort pressure-induced structural transformations in si:v and si:v, mn
publisher Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України
publishDate 2008
url http://dspace.nbuv.gov.ua/handle/123456789/70463
citation_txt Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.
series Физика и техника высоких давлений
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AT barcza pressureinducedstructuraltransformationsinsivandsivmn
AT chowl pressureinducedstructuraltransformationsinsivandsivmn
AT bakmisiukj pressureinducedstructuraltransformationsinsivandsivmn
AT romanowskip pressureinducedstructuraltransformationsinsivandsivmn
AT shalimova pressureinducedstructuraltransformationsinsivandsivmn
AT wnuka pressureinducedstructuraltransformationsinsivandsivmn
AT surmab pressureinducedstructuraltransformationsinsivandsivmn
AT vanfleetr pressureinducedstructuraltransformationsinsivandsivmn
AT prujszczykm pressureinducedstructuraltransformationsinsivandsivmn
first_indexed 2023-10-18T18:58:37Z
last_indexed 2023-10-18T18:58:37Z
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