Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist
Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on a silicon surface was developed, and silicon aniso...
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| Date: | 2007 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/117772 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist / V.I. Min'ko, P.E. Shepeliavyi, I.Z. Indutnyy, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 40-44. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Application of inorganic photoresist based on chalcogenide films for
fabrication of submicrometer periodic relief on silicon wafers was investigated. For this
purpose, technological process of resistive two-layer chalcogenide-Cr mask formation on
a silicon surface was developed, and silicon anisotropic etching was optimized, too. This
technology has been used for the fabrication of high-quality diffraction gratings on Si
(100) surface with symmetric triangular and trapezium grooves and two-dimentional
periodic structures. Relief parameters and diffraction properties of the obtained structures
and their dependences on etching time were determined |
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