Electron field emission from SiOx films

Electron field emission from SiOx films

Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced by silicon thermal evaporation in vacuum (10⁻⁵ Torr). Using optical spectrosc...

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Дата:2003
Автори: Evtukh, А.А., Indutnyy, I.Z., Lisovskyy, I.P., Litvin, Yu.M., Litovchenko, V.G., Lytvyn, P.M., Mazunov, D.O., Rassamakin, Yu.V., Shepeliavyi, P.E.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/117959
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Electron field emission from SiOx films / А.А. Evtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.M. Lytvyn, D.О. Mazunov, Yu.V. Rassamakin, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 32-36. — Бібліогр.: 16 назв. — англ.

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spelling nasplib_isofts_kiev_ua-123456789-1179592025-02-23T18:48:52Z Electron field emission from SiOx films Evtukh, А.А. Indutnyy, I.Z. Lisovskyy, I.P. Litvin, Yu.M. Litovchenko, V.G. Lytvyn, P.M. Mazunov, D.O. Rassamakin, Yu.V. Shepeliavyi, P.E. Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced by silicon thermal evaporation in vacuum (10⁻⁵ Torr). Using optical spectroscopy in visible and infrared ranges, as well as AFM technique, structural features of these films were investigated. It was shown that initial SiOx film may be represented as SiOх (Si) composite (x 1.2). Thermal annealing causes further phase segregation in film material, and it is transformed into SiO₂ (Si) composite. During such a process, silicon grains size decreases and their density increases. The model of electron field emission from the surface of such films was proposed. It was supposed that limitation process of the current flow under high electric fields is connected with Fowler-Nordheim tunneling through barriers Si-SiOх-vacuum or Si-vacuum. Current peaks in emission I-V characteristics were explained in the framework of resonance tunneling mechanism. Investigated structures seems to be perspective for application as flat field cathodes in vacuum electronic devices and in flat panel field emission displays. 2003 Article Electron field emission from SiOx films / А.А. Evtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.M. Lytvyn, D.О. Mazunov, Yu.V. Rassamakin, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 32-36. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 61.16.Ch, 79.70.+q https://nasplib.isofts.kiev.ua/handle/123456789/117959 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced by silicon thermal evaporation in vacuum (10⁻⁵ Torr). Using optical spectroscopy in visible and infrared ranges, as well as AFM technique, structural features of these films were investigated. It was shown that initial SiOx film may be represented as SiOх (Si) composite (x 1.2). Thermal annealing causes further phase segregation in film material, and it is transformed into SiO₂ (Si) composite. During such a process, silicon grains size decreases and their density increases. The model of electron field emission from the surface of such films was proposed. It was supposed that limitation process of the current flow under high electric fields is connected with Fowler-Nordheim tunneling through barriers Si-SiOх-vacuum or Si-vacuum. Current peaks in emission I-V characteristics were explained in the framework of resonance tunneling mechanism. Investigated structures seems to be perspective for application as flat field cathodes in vacuum electronic devices and in flat panel field emission displays.
format Article
author Evtukh, А.А.
Indutnyy, I.Z.
Lisovskyy, I.P.
Litvin, Yu.M.
Litovchenko, V.G.
Lytvyn, P.M.
Mazunov, D.O.
Rassamakin, Yu.V.
Shepeliavyi, P.E.
spellingShingle Evtukh, А.А.
Indutnyy, I.Z.
Lisovskyy, I.P.
Litvin, Yu.M.
Litovchenko, V.G.
Lytvyn, P.M.
Mazunov, D.O.
Rassamakin, Yu.V.
Shepeliavyi, P.E.
Electron field emission from SiOx films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Evtukh, А.А.
Indutnyy, I.Z.
Lisovskyy, I.P.
Litvin, Yu.M.
Litovchenko, V.G.
Lytvyn, P.M.
Mazunov, D.O.
Rassamakin, Yu.V.
Shepeliavyi, P.E.
author_sort Evtukh, А.А.
title Electron field emission from SiOx films
title_short Electron field emission from SiOx films
title_full Electron field emission from SiOx films
title_fullStr Electron field emission from SiOx films
title_full_unstemmed Electron field emission from SiOx films
title_sort electron field emission from siox films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url https://nasplib.isofts.kiev.ua/handle/123456789/117959
citation_txt Electron field emission from SiOx films / А.А. Evtukh, I.Z. Indutnyy, I.P. Lisovskyy, Yu.M. Litvin, V.G. Litovchenko, P.M. Lytvyn, D.О. Mazunov, Yu.V. Rassamakin, P.E. Shepeliavyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 32-36. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-11-24T11:44:24Z
last_indexed 2025-11-24T11:44:24Z
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