Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
Effect of magnetic field (up to 14 T) on current-voltage characteristics of silicon n⁺ -p diodes which manifests hysteresis loops related with low-temperature impurity breakdown has been studied. With growth of magnetic field, the hysteresis loops are narrowed and decreased in amplitude and then...
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| Date: | 2012 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/118325 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown / A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 288-293. — Бібліогр.: 19 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Effect of magnetic field (up to 14 T) on current-voltage characteristics of
silicon n⁺
-p diodes which manifests hysteresis loops related with low-temperature
impurity breakdown has been studied. With growth of magnetic field, the hysteresis
loops are narrowed and decreased in amplitude and then disappear, but the breakdown
continues in a soft form. Planar design of the diode has allowed separating the influence
of magnetic field on mobility of the carriers executing impact ionization of the impurities
and on the ionization energy itself. Theoretical analysis of the experimental data
permitted us to determine the dependence of the ionization energy on the magnetic field.
As in other investigated semiconductors, our results demonstrate the dependence of B¹/³
type. A model capable to explain qualitatively the mechanism of suppression of the
hysteresis loops by magnetic field is proposed as well. |
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