Peculiarities of neutron irradiation influence on GaP light-emitting structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2009
• Hauptverfasser: Litovchenko, P., Litovchenko, A., Konoreva, O., Opilat, V., Pinkovska, M., Tartachnyk, V.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/118874
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ.

GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their capture by radiation defects. Study of currentvoltage characteristics at 77 K by highly precession methods has revealed the appearance of N-shaped negative differential region caused by carrier tunneling onto deep levels in quantum wells, which might exist in initial and irradiated p-n structures. In some cases, improvement of current-voltage characteristics after neutron irradiation is observed. An assumption is made about the radiation-stimulated origin of this effect.