Peculiarities of neutron irradiation influence on GaP light-emitting structures
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
 methods. The observed emission intensity degradation is related with two factors:
 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
 concentration, which i...
Збережено в:
| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 2009 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118874 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862656904126267392 |
|---|---|
| author | Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_facet | Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| citation_txt | Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
methods. The observed emission intensity degradation is related with two factors:
1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
concentration, which is caused by their capture by radiation defects. Study of currentvoltage
characteristics at 77 K by highly precession methods has revealed the appearance
of N-shaped negative differential region caused by carrier tunneling onto deep levels in
quantum wells, which might exist in initial and irradiated p-n structures. In some cases,
improvement of current-voltage characteristics after neutron irradiation is observed. An
assumption is made about the radiation-stimulated origin of this effect.
|
| first_indexed | 2025-12-02T05:37:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-118874 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T05:37:11Z |
| publishDate | 2009 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. 2017-05-31T19:47:50Z 2017-05-31T19:47:50Z 2009 Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/118874 GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
 methods. The observed emission intensity degradation is related with two factors:
 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
 concentration, which is caused by their capture by radiation defects. Study of currentvoltage
 characteristics at 77 K by highly precession methods has revealed the appearance
 of N-shaped negative differential region caused by carrier tunneling onto deep levels in
 quantum wells, which might exist in initial and irradiated p-n structures. In some cases,
 improvement of current-voltage characteristics after neutron irradiation is observed. An
 assumption is made about the radiation-stimulated origin of this effect. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of neutron irradiation influence on GaP light-emitting structures Article published earlier |
| spellingShingle | Peculiarities of neutron irradiation influence on GaP light-emitting structures Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| title | Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_full | Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_fullStr | Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_full_unstemmed | Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_short | Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_sort | peculiarities of neutron irradiation influence on gap light-emitting structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/118874 |
| work_keys_str_mv | AT litovchenkop peculiaritiesofneutronirradiationinfluenceongaplightemittingstructures AT litovchenkoa peculiaritiesofneutronirradiationinfluenceongaplightemittingstructures AT konorevao peculiaritiesofneutronirradiationinfluenceongaplightemittingstructures AT opilatv peculiaritiesofneutronirradiationinfluenceongaplightemittingstructures AT pinkovskam peculiaritiesofneutronirradiationinfluenceongaplightemittingstructures AT tartachnykv peculiaritiesofneutronirradiationinfluenceongaplightemittingstructures |