Peculiarities of neutron irradiation influence on GaP light-emitting structures
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their captur...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2009 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/118874 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-118874 |
|---|---|
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dspace |
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Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. 2017-05-31T19:47:50Z 2017-05-31T19:47:50Z 2009 Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 29.40.-n, 85.30.-z, 85.60.Dw https://nasplib.isofts.kiev.ua/handle/123456789/118874 GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their capture by radiation defects. Study of currentvoltage characteristics at 77 K by highly precession methods has revealed the appearance of N-shaped negative differential region caused by carrier tunneling onto deep levels in quantum wells, which might exist in initial and irradiated p-n structures. In some cases, improvement of current-voltage characteristics after neutron irradiation is observed. An assumption is made about the radiation-stimulated origin of this effect. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of neutron irradiation influence on GaP light-emitting structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| spellingShingle |
Peculiarities of neutron irradiation influence on GaP light-emitting structures Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| title_short |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_full |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_fullStr |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_full_unstemmed |
Peculiarities of neutron irradiation influence on GaP light-emitting structures |
| title_sort |
peculiarities of neutron irradiation influence on gap light-emitting structures |
| author |
Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| author_facet |
Litovchenko, P. Litovchenko, A. Konoreva, O. Opilat, V. Pinkovska, M. Tartachnyk, V. |
| publishDate |
2009 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
GaP LEDs irradiated by reactor neutrons were studied by optical and electrical
methods. The observed emission intensity degradation is related with two factors:
1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier
concentration, which is caused by their capture by radiation defects. Study of currentvoltage
characteristics at 77 K by highly precession methods has revealed the appearance
of N-shaped negative differential region caused by carrier tunneling onto deep levels in
quantum wells, which might exist in initial and irradiated p-n structures. In some cases,
improvement of current-voltage characteristics after neutron irradiation is observed. An
assumption is made about the radiation-stimulated origin of this effect.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/118874 |
| citation_txt |
Peculiarities of neutron irradiation influence on GaP light-emitting structures / P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat, M. Pinkovska, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 276-279. — Бібліогр.: 8 назв. — англ. |
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2025-12-02T05:37:11Z |
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2025-12-02T05:37:11Z |
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