Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.

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Бібліографічні деталі
Дата:2009
Автори: Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2009
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/118876
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling nasplib_isofts_kiev_ua-123456789-1188762025-06-03T16:26:26Z Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment Konakova, R.V. Kladko, V.P. Lytvyn, O.S. Okhrimenko, O.B. Konoplev, B.G. Svetlichnyi, A.M. Lissotschenko, V.N. We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface. 2009 Article Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 71.20.Nr, 78.40.Fy https://nasplib.isofts.kiev.ua/handle/123456789/118876 en Semiconductor Physics Quantum Electronics & Optoelectronics application/pdf Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We studied the effect of laser treatment on the glass-Si₃N₄-Si-SiO₂ structures. It is shown that laser treatment causes appearance of an additional band in their transmission spectra as well as smearing of grain structure at their surface.
format Article
author Konakova, R.V.
Kladko, V.P.
Lytvyn, O.S.
Okhrimenko, O.B.
Konoplev, B.G.
Svetlichnyi, A.M.
Lissotschenko, V.N.
spellingShingle Konakova, R.V.
Kladko, V.P.
Lytvyn, O.S.
Okhrimenko, O.B.
Konoplev, B.G.
Svetlichnyi, A.M.
Lissotschenko, V.N.
Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Konakova, R.V.
Kladko, V.P.
Lytvyn, O.S.
Okhrimenko, O.B.
Konoplev, B.G.
Svetlichnyi, A.M.
Lissotschenko, V.N.
author_sort Konakova, R.V.
title Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_short Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_full Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_fullStr Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_full_unstemmed Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment
title_sort modification of properties of the glass-si₃n₄-si-sio₂ structure at laser treatment
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2009
url https://nasplib.isofts.kiev.ua/handle/123456789/118876
citation_txt Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment / R.V. Konakova, V.P. Kladko, O.S. Lytvyn, O.B. Okhrimenko, B.G. Konoplev, A.M. Svetlichnyi, V.N. Lissotschenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 284-286. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-11-24T15:15:03Z
last_indexed 2025-11-24T15:15:03Z
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