Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2006
• Main Authors: Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121436
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation / Y. Houk, A.N. Nazarov, V.I. Turchanikov, V.S. Lysenko, S. Andriaensen, D. Flandre // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 69-74. — Бібліогр.: 7 назв. — англ.

An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the paper. Characterization of trapped charge in the gate and buried oxides of the devices was performed by measuring only the front-gate transistors. It was revealed that the irradiation effect on EM n-MOSFET is stronger than that on AM p-MOSFET. Radiation-induced positive charge in the buried oxide proved to invert back interface what causes back channel creation in EM n-MOSFET but no such effect in AM p-MOSFET has been not observed. The effect of improving the quality of both interfaces for small irradiation doses is demonstrated.