Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

• Date: 2009
• Main Authors: Bak-Misiuk, J., Romanowski, P., Domagala, J., Misiuk, A., Dynowska, E., Lusakowska, E., Barcz, A., Sadowski, J., Caliebe, W.
• Format: Article
• Language: English
• Published: Донецький фізико-технічний інститут ім. О.О. Галкіна НАН України 2009
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/5986
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure / J. Bak-Misiuk, P. Romanowski, J. Domagala, A. Misiuk, E. Dynowska, E. Lusakowska, A. Barcz, J. Sadowski, W. Caliebe // Физика и техника высоких давлений. — 2009. — Т. 19, № 2. — С. 32-40. — Бібліогр.: 9 назв. — англ.

We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions on structural properties of Si:Mn and GaMnAs layers was investigated. It h...