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Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines by Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

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Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Technology and experimental studies of contacts for microwave diodes based on interstitial phases by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them by Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN by Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Zhigunov, V.S., Konakova, R.V., Panteleev, V.N., Sachenko, A.V., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

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Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures by Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

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A silicon carbide thermistor by Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

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Особливості формування омічних контактів до n+-InN by Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V.

Published 2019

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Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs by Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Contacts for silicon IMPATT and pick-off diodes by Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

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Method for data processing in application to ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kovtonjuk, V.M., Kudryk, Ya.Ya., Shynkarenko, V.V., Dub, M.M., Saj, P.O., Novitskii, S.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2019)

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On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes by Romanets, P.M., Belyaev, A.E., Sachenko, А.V., Boltovets, N.S., Basanets, V.V., Konakova, R.V., Slipokurov, V.S., Khodin, А.А., Pilipenko, V.А., Shynkarenko, V.V., Kudryk, Ya.Ya.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2016)

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Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах... by Boltovets, N. S., Ivanov, V. N., Kovtonyuk, V. M., Rayevskaya, N. S., Belyaev, A. E., Bobyl, A. V., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Novitskiy, C. V., Sheremet, V. N.

Published 2010

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Development of high-stable contact systems to gallium nitride microwave diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Search Results - Boltovets, N. S.

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines by Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films by Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.

Technology and experimental studies of contacts for microwave diodes based on interstitial phases by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them by Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN by Belyaev, A.E., Boltovets, N.S., Zhilyaev, Yu.V., Zhigunov, V.S., Konakova, R.V., Panteleev, V.N., Sachenko, A.V., Sheremet, V.N.

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures by Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

A silicon carbide thermistor by Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.

Особливості формування омічних контактів до n+-InN by Sai, P. O., Safryuk-Romanenko, N. V., But, D. B., Cywiński, G., Boltovets, N. S., Brunkov, P. N., Jmeric, N. V., Ivanov, S. V., Shynkarenko, V. V.

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs by Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.

Contacts for silicon IMPATT and pick-off diodes by Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.

Method for data processing in application to ohmic contacts by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kovtonjuk, V.M., Kudryk, Ya.Ya., Shynkarenko, V.V., Dub, M.M., Saj, P.O., Novitskii, S.V.

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts by Belyaev, A.E., Boltovets, N.S., Kapitanchuk, L.M., Konakova, R.V., Kladko, V.P., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Korostinskaya, T.V., Ataubaeva, A.B., Nevolin, P.V.

Development of high-stable contact systems to gallium nitride microwave diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.

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