Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

за авторством Vlasov, S.I., Saparov, F.A., Ismailov, K.A.
Опубліковано 2010

Ti-derived intermediate band in MgH₂

за авторством Sheripov, U., Zhanabergenov, Zh., Uteniyazov, A., Ismailov, K., Karazhanov, S.
Опубліковано 2012

Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures

за авторством Abdizhaliev, S.K., Ismailov, K.A., Kamalov, A.B., Kudrik, Ya.Ya.
Опубліковано 2003