Effect of ultrasound irradiation on the electro-physical properties of the structure of Al-Al₂O₃-CdTe за авторством Uteniyazov, A.K., Ismailov, K.A.

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Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor за авторством Vlasov, S.I., Saparov, F.A., Ismailov, K.A.

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Ti-derived intermediate band in MgH₂ за авторством Sheripov, U., Zhanabergenov, Zh., Uteniyazov, A., Ismailov, K., Karazhanov, S.

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Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures за авторством Abdizhaliev, S.K., Ismailov, K.A., Kamalov, A.B., Kudrik, Ya.Ya.

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Clusters of nickel atoms and controlling their state in the silicon lattice за авторством Bakhadyrkhanov, M.K., Ismailov, K.A., Ismaylov, B.K., Saparniyazova, Z.M.

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Effect of the diffusion temperature on the interaction of clusters with impurity atoms in silicon за авторством Saparniyazova, Z.M., Ismailov, K.A., Uteniyazov, A.K., Kamalov, Kh.U.

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Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon за авторством Ismailov, K.А., Iliev, X.M., Tursunov, M.O., Ismaylov, B.K.

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Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon за авторством Bakhadyrkhanov, M.K., Ismaylov, B.K., Tachilin, S.A., Ismailov, K.A., Zikrillaev, N.F.

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