Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Published 2007

Degradation of voltage-current characteristics of gallium phosphide diodes due to radiation-induced defects

by Dubovyi, V.K., Kanevsky, S.O., Litovchenko, P.G., Opilat, V.Ya., Tartachnik, V.P.
Published 2005

Influence of structural defects on photoconductivity of zinc diphosphide

by Kudin, A.P., Kuts, V.I., Litovchenko, P.G., Pinkovska, M.B., Tartachnyk, V.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs

by Kаrpenko, А.Ya., Litovchenko, P.G., Shevtsova, О.N., Sugakov, V.I., Vikhlii, G.A.
Published 2003

Seebeck’s effect in p-SiGe whisker samples

by Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Published 2011

Радиационная стойкость нитевидных кристаллов SiGe, используемых для сенсоров фи­зи­чес­ких величин...

by Druzhinin, A. A., Ostrovskiy, I. P., Khoverko, Yu. N., Litovchenko, P. G., Pavlovska, N. T., Pavlovskiy, Yu. V., Tsmots, V. M., Povarchuk, V. Yu.
Published 2011

Semiconductor sensors for dosimetry of epithermal neutrons

by Litovchenko, P.G., Moss, R., Stecher-Rasmussen, F., Appelman, K., Barabash, L.I., Kibkalo, T.I., Lastovetsky, V.F., Litovchenko, A.P., Pinkovska, M.B.
Published 1999