Харвестер відкритої науки НАН України

Defect reorganization induced by pulsed magnetic field in porous InP

за авторством Milenin, V.V., Red’ko, R.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals

за авторством Milenin, V.V., Red’ko, R.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures

за авторством Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices

за авторством Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

за авторством Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

за авторством Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

за авторством Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

за авторством Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures

за авторством Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Mitin, V.F., Mitin, E.V., Lytvyn, O.S., Kapitanchuk, L.M.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

A silicon carbide thermistor

за авторством Boltovets, N.S., Kholevchuk, V.V., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, P.M., Milenin, V.V., Mitin, V.F., Mitin, E.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

за авторством Litvinov, V.L., Demakov, K.D., Agueev, O.A., Svetlichny, A.M., Konakova, R.V., Lytvyn, P.M., Lytvyn, O.S., Milenin, V.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

за авторством Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

за авторством Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs

за авторством Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

Contacts for silicon IMPATT and pick-off diodes

за авторством Boltovets, N.S., Goncharuk, N.M., Krivutsa, V.A., Chaika, V.E., Konakova, R.V., Milenin, V.V., Soloviev, E.A., Tagaev, M.B., Voitsikhovskyi, D.I.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

за авторством Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

за авторством Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Опубліковано в: Semiconductor Physics Quantum Electronics & Optoelectronics (2007)