Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios

Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and individual layers, relaxation level and periods, layers’ thickness and compositio...

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Бібліографічні деталі
Дата:2014
Автори: Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118414
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118414
record_format dspace
spelling irk-123456789-1184142017-05-31T03:03:27Z Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios Kladko, V.P. Safriuk, N.V. Stanchu, H.V. Kuchuk, A.V. Melnyk, V.P. Oberemok, A.S. Kriviy, S.B. Maksymenko, Z.V. Belyaev, A.E. Yavich, B.S. Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and individual layers, relaxation level and periods, layers’ thickness and composition of AlxGa₁₋xN layers were analyzed using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and SL layers are compressed in all the investigated structures. Thus, it has been shown that deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of individual layers in SL strongly depend on the deformation state of the whole system. Increasing the deformation level leads to the increase of the barrier layer thickness. 2014 Article Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.05.cp, 64.75.Nx, 78.55.-m, 78.67.Hc, 78.55.Cr, 78.67.De, 81.07.St http://dspace.nbuv.gov.ua/handle/123456789/118414 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and individual layers, relaxation level and periods, layers’ thickness and composition of AlxGa₁₋xN layers were analyzed using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and SL layers are compressed in all the investigated structures. Thus, it has been shown that deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of individual layers in SL strongly depend on the deformation state of the whole system. Increasing the deformation level leads to the increase of the barrier layer thickness.
format Article
author Kladko, V.P.
Safriuk, N.V.
Stanchu, H.V.
Kuchuk, A.V.
Melnyk, V.P.
Oberemok, A.S.
Kriviy, S.B.
Maksymenko, Z.V.
Belyaev, A.E.
Yavich, B.S.
spellingShingle Kladko, V.P.
Safriuk, N.V.
Stanchu, H.V.
Kuchuk, A.V.
Melnyk, V.P.
Oberemok, A.S.
Kriviy, S.B.
Maksymenko, Z.V.
Belyaev, A.E.
Yavich, B.S.
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kladko, V.P.
Safriuk, N.V.
Stanchu, H.V.
Kuchuk, A.V.
Melnyk, V.P.
Oberemok, A.S.
Kriviy, S.B.
Maksymenko, Z.V.
Belyaev, A.E.
Yavich, B.S.
author_sort Kladko, V.P.
title Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
title_short Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
title_full Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
title_fullStr Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
title_full_unstemmed Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
title_sort deformation state of short-period algan/gan superlattices at different well-barrier thickness ratios
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2014
url http://dspace.nbuv.gov.ua/handle/123456789/118414
citation_txt Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kladkovp deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT safriuknv deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT stanchuhv deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT kuchukav deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT melnykvp deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT oberemokas deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT kriviysb deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT maksymenkozv deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT belyaevae deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
AT yavichbs deformationstateofshortperiodalgangansuperlatticesatdifferentwellbarrierthicknessratios
first_indexed 2023-10-18T20:32:05Z
last_indexed 2023-10-18T20:32:05Z
_version_ 1796150452289536000

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