The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment
The effect of short-term microwave treatment (MT) on the electronic properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The samples of two types were studied: check ones (batch I) and those exposed to previous MT (batch II). The samples were aged (hold in air) at a te...
Збережено в:
| Дата: | 2008 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119071 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment / E.Yu. Kolyadina, R.V. Konakova, L.A. Matveeva, V.F. Mitin, V.V. Shynkarenko, E. Atanassova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 311-318. — Бібліогр.: 32 назв. — англ. |