Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse cu...

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Бібліографічні деталі
Дата:2001
Автори: Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119312
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1193122017-06-07T03:02:51Z Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them Boltovets, N.S. Voitsikhovskyi, D.I. Konakova, R.V. Milenin, V.V. Makara, V.A. Rudenko, O.V. Mel’nichenko, M.M. Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse current of thermal-generation nature, minority charge carrier lifetime τp in the n-layer and concentration of structural defects (structural perfection of the n⁺-substrate). We advance a model for strained state of multilayer device structures, in particular, those with ohmic and contact layers. 2001 Article Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS: 07.07D, 07.57H, 81.05Y, 84.40D http://dspace.nbuv.gov.ua/handle/123456789/119312 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse current of thermal-generation nature, minority charge carrier lifetime τp in the n-layer and concentration of structural defects (structural perfection of the n⁺-substrate). We advance a model for strained state of multilayer device structures, in particular, those with ohmic and contact layers.
format Article
author Boltovets, N.S.
Voitsikhovskyi, D.I.
Konakova, R.V.
Milenin, V.V.
Makara, V.A.
Rudenko, O.V.
Mel’nichenko, M.M.
spellingShingle Boltovets, N.S.
Voitsikhovskyi, D.I.
Konakova, R.V.
Milenin, V.V.
Makara, V.A.
Rudenko, O.V.
Mel’nichenko, M.M.
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Boltovets, N.S.
Voitsikhovskyi, D.I.
Konakova, R.V.
Milenin, V.V.
Makara, V.A.
Rudenko, O.V.
Mel’nichenko, M.M.
author_sort Boltovets, N.S.
title Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
title_short Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
title_full Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
title_fullStr Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
title_full_unstemmed Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
title_sort comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119312
citation_txt Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:34:16Z
last_indexed 2023-10-18T20:34:16Z
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