Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at e...

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Дата:2005
Автори: Wierzchowski, W., Misiuk, A., Wieteska, K., Bak-Misiuk, J., Jung, W., Shalimov, A., Graeff, W., Prujszczyk, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120654
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-120654
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spelling irk-123456789-1206542017-06-13T03:06:38Z Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure Wierzchowski, W. Misiuk, A. Wieteska, K. Bak-Misiuk, J. Jung, W. Shalimov, A. Graeff, W. Prujszczyk, M. Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed. 2005 Article Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 61,72Tt, 61,82Fk, 62.50p,73.61.-r, 73.30.+ http://dspace.nbuv.gov.ua/handle/123456789/120654 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed.
format Article
author Wierzchowski, W.
Misiuk, A.
Wieteska, K.
Bak-Misiuk, J.
Jung, W.
Shalimov, A.
Graeff, W.
Prujszczyk, M.
spellingShingle Wierzchowski, W.
Misiuk, A.
Wieteska, K.
Bak-Misiuk, J.
Jung, W.
Shalimov, A.
Graeff, W.
Prujszczyk, M.
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Wierzchowski, W.
Misiuk, A.
Wieteska, K.
Bak-Misiuk, J.
Jung, W.
Shalimov, A.
Graeff, W.
Prujszczyk, M.
author_sort Wierzchowski, W.
title Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
title_short Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
title_full Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
title_fullStr Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
title_full_unstemmed Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
title_sort defect structure of czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/120654
citation_txt Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT jungw defectstructureofczochralskisiliconcoimplantedwithheliumandhydrogenandtreatedathightemperaturepressure
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first_indexed 2023-10-18T20:37:33Z
last_indexed 2023-10-18T20:37:33Z
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