Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile s...

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Бібліографічні деталі
Дата:2015
Автори: Shapovalov, A.P., Korotash, I.V., Rudenko, E.M., Sizov, F.F., Dubyna, D.S., Osipov, L.S., Polotskiy, D.Yu., Tsybri, Z.F., Korchovyi, A.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120739
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 117-122. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-120739
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spelling irk-123456789-1207392017-06-13T03:02:52Z Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique Shapovalov, A.P. Korotash, I.V. Rudenko, E.M. Sizov, F.F. Dubyna, D.S. Osipov, L.S. Polotskiy, D.Yu. Tsybri, Z.F. Korchovyi, A.A. Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the btained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared pectral range. 2015 Article Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 117-122. — Бібліогр.: 18 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.117 PACS 52.77.Dq, 73.61.Ey, 73.61.Jc, 78.40.Pg, 78.66.Fd http://dspace.nbuv.gov.ua/handle/123456789/120739 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN films (reflection and transmission spectra within the range 2…25 µm) has been carried out by using the infrared Fourier spectrometer Spectrum BX-II. It has been shown that the btained composite structures (AlN coatings on teflon and mylar substrates) could be used as passive filters in the infrared pectral range.
format Article
author Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybri, Z.F.
Korchovyi, A.A.
spellingShingle Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybri, Z.F.
Korchovyi, A.A.
Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Shapovalov, A.P.
Korotash, I.V.
Rudenko, E.M.
Sizov, F.F.
Dubyna, D.S.
Osipov, L.S.
Polotskiy, D.Yu.
Tsybri, Z.F.
Korchovyi, A.A.
author_sort Shapovalov, A.P.
title Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_short Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_full Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_fullStr Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_full_unstemmed Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique
title_sort structure and optical properties of aln films obtained using the cathodic arc plasma deposition technique
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/120739
citation_txt Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique / A.P. Shapovalov, I.V. Korotash, E.M. Rudenko, F.F. Sizov, D.S. Dubyna, L.S. Osipov, D.Yu. Polotskiy, Z.F. Tsybrii, A.A. Korchovyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 117-122. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:37:59Z
last_indexed 2023-10-18T20:37:59Z
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