Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation...

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Дата:2002
Автори: Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121160
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1211602017-06-14T03:07:33Z Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines Boltovets, N.S. Kashin, G.N. Konakova, R.V. Lyapin, V.G. Milenin, V.V. Soloviev, E.A. We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation in oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of quartz in a vacuum. The SiO₂ films obtained using monosilane oxidation or electron-beam evaporation of quartz demonstrated better properties. For the Au-Ti-SiO₂-GaAs structures a layer structure transformation was shown to occur, with formation of TiOx-SiO₂ junction and gold atoms penetration over the whole adhesion layer thickness. The microwave oscillator modules made using the Au-Ti-SiO₂-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm wavelength range. 2002 Article Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 68.65.A http://dspace.nbuv.gov.ua/handle/123456789/121160 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs structures were formed using different techniques, namely, (i) monosilane oxidation in oxygen, (ii) high-temperature tetraethoxysilane decomposition, (iii) high-frequency cathode sputtering of quartz in argon plasma, and (iv) electron-beam evaporation of quartz in a vacuum. The SiO₂ films obtained using monosilane oxidation or electron-beam evaporation of quartz demonstrated better properties. For the Au-Ti-SiO₂-GaAs structures a layer structure transformation was shown to occur, with formation of TiOx-SiO₂ junction and gold atoms penetration over the whole adhesion layer thickness. The microwave oscillator modules made using the Au-Ti-SiO₂-GaAs (Si) structures demonstrated output power of 10-60 mW in the 8 mm wavelength range.
format Article
author Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
spellingShingle Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Boltovets, N.S.
Kashin, G.N.
Konakova, R.V.
Lyapin, V.G.
Milenin, V.V.
Soloviev, E.A.
author_sort Boltovets, N.S.
title Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_short Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_full Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_fullStr Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_full_unstemmed Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
title_sort properties of sio₂-gaas and au-ti-sio₂-gaas structures used in production of transmission lines
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/121160
citation_txt Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines / N.S. Boltovets, G.N. Kashin, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:38:46Z
last_indexed 2023-10-18T20:38:46Z
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