Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free va...
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| Дата: | 2015 |
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| Автори: | , , , , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121259 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ. |
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irk-123456789-1212592017-06-14T03:06:57Z Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP Belyaev, A.E. Boltovets, N.A. Bobyl, A.B. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Nasyrov, M.U. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻². 2015 Article Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.391 PACS 73.40.Ns http://dspace.nbuv.gov.ua/handle/123456789/121259 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻². |
| format |
Article |
| author |
Belyaev, A.E. Boltovets, N.A. Bobyl, A.B. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Nasyrov, M.U. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
| spellingShingle |
Belyaev, A.E. Boltovets, N.A. Bobyl, A.B. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Nasyrov, M.U. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Belyaev, A.E. Boltovets, N.A. Bobyl, A.B. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Nasyrov, M.U. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
| author_sort |
Belyaev, A.E. |
| title |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP |
| title_short |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP |
| title_full |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP |
| title_fullStr |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP |
| title_full_unstemmed |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP |
| title_sort |
structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -inp |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121259 |
| citation_txt |
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:01Z |
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