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Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free va...

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Main Authors: Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121259
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spelling irk-123456789-1212592017-06-14T03:06:57Z Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP Belyaev, A.E. Boltovets, N.A. Bobyl, A.B. Kladko, V.P. Konakova, R.V. Kudryk, Ya.Ya. Nasyrov, M.U. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻². 2015 Article Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.391 PACS 73.40.Ns http://dspace.nbuv.gov.ua/handle/123456789/121259 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻².
format Article
author Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
spellingShingle Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
author_sort Belyaev, A.E.
title Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_short Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_full Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_fullStr Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_full_unstemmed Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_sort structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -inp
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121259
citation_txt Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:01Z
last_indexed 2023-10-18T20:39:01Z
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