Investigation of superlattice structure parameters using quasi-forbidden reflections

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2003
• Main Authors: Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/118048
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Investigation of superlattice structure parameters using quasi-forbidden reflections / V.P. Kladko, L.I. Datsenko, A.A. Korchovyi, V.F. Machulin, P.M. Lytvyn, A.V. Shalimov, A.V. Kuchuk, P.P. Kogutyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 392-396. — Бібліогр.: 7 назв. — англ.

We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer structure parameters and sublayer thickness. The effect of irregularity of su...