Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP

Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free va...

Повний опис

Збережено в:
Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2015
Автори: Belyaev, A.E., Boltovets, N.A., Bobyl, A.B., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Nasyrov, M.U., Sachenko, A.V., Slipokurov, V.S., Slepova, A.S., Safryuk, N.V., Gudymenko, A.I., Shynkarenko, V.V.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121259
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
_version_ 1862599426775711744
author Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
author_facet Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
citation_txt Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻².
first_indexed 2025-11-27T22:35:38Z
format Article
fulltext
id nasplib_isofts_kiev_ua-123456789-121259
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
issn 1560-8034
language English
last_indexed 2025-11-27T22:35:38Z
publishDate 2015
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
2017-06-13T18:09:09Z
2017-06-13T18:09:09Z
2015
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP / A.E. Belyaev, N.A. Boltovets, A.B. Bobyl, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, M.U. Nasyrov, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 391-395. — Бібліогр.: 18 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.04.391
PACS 73.40.Ns
https://nasplib.isofts.kiev.ua/handle/123456789/121259
Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared using the method of successive thermal evaporation of metals in oil-free vacuum in one process cycle onto the n⁺-n-n⁺⁺-n⁺⁺⁺-InP epitaxial structure heated to 300 °C. It has been theoretically and experimentally shown that within the temperature range 250…380 K the current transport mechanism in the ohmic contacts Au–Ti–Pd–n⁺-InP is thermal-field one, and in the ohmic contacts Au–Ti–Ge–Pd-n⁺-InP it is caused by conductivity along metal shunts linked with dislocations. According to the X-ray diffraction data, the density of these dislocations in the near-contact InP area is ~10⁹ cm⁻².
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Article
published earlier
spellingShingle Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
Belyaev, A.E.
Boltovets, N.A.
Bobyl, A.B.
Kladko, V.P.
Konakova, R.V.
Kudryk, Ya.Ya.
Nasyrov, M.U.
Sachenko, A.V.
Slipokurov, V.S.
Slepova, A.S.
Safryuk, N.V.
Gudymenko, A.I.
Shynkarenko, V.V.
title Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_full Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_fullStr Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_full_unstemmed Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_short Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
title_sort structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -inp
url https://nasplib.isofts.kiev.ua/handle/123456789/121259
work_keys_str_mv AT belyaevae structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT boltovetsna structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT bobylab structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT kladkovp structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT konakovarv structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT kudrykyaya structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT nasyrovmu structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT sachenkoav structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT slipokurovvs structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT slepovaas structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT safryuknv structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT gudymenkoai structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp
AT shynkarenkovv structuralandelectricalphysicalpropertiesoftheohmiccontactsbasedonpalladiumtonnnninp