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Диоды Ганна из GaAs с катодным контактом, инжектирующим горячие электроны by Ivanov, V. N., Kovtonjuk, V. M., Nikolaenko, Ju. E.

Published 2007

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Технология изготовления GaAs-диодов Ганна для диапазона коротких миллимитровых длин волн by Ivanov, V. N., Kovtonyuk, V. M., Nikolaienko, Yu. E.

Published 2006

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Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices by Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

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Слаботочные диоды Ганна на основе арсенида галлия для КВЧ-аппаратов by Yatsunenko, A. G., Kovtonyk, V. M., Ivanov, V. N., Nikolaenko, Yu. E.

Published 2005

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Использование электромагнитного излучения в медицине и требования к построению КВЧ-аппаратов by Yatsunenko, A. G., Kovtonyuk, V. M., Ivanov, V. N., Nikolayenko, Yu. E.

Published 2005

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Magnetron sputtered coatings of AlN-TiCrB₂ system by Panasyuk, A.D., Podchernyaeva, I.A., Neshpor, I.P., Gawalek, W., Ivanov, V.N.

Published in Functional Materials (2009)

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TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment by Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Плазмохимическое травление эпитаксиальных структур нитрида галлия by Borisenko, A. G., Polozov, B. P., Fedorovich, O. A., Boltovets, M. S., Ivanov, V. N., Sveschnikov, Yu. N.

Published 2005

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Формирование мезаструктур 4НSiC p–i–n-диодов методом ионно-плазменного травления by Boltovets, M. S., Borisenko, A. G., Ivanov, V. N., Fedorovich, О. А., Krivutsa, V. A., Polozov, B. P.

Published 2009

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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide by Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Technology and experimental studies of contacts for microwave diodes based on interstitial phases by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

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Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs by Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах... by Boltovets, N. S., Ivanov, V. N., Kovtonyuk, V. M., Rayevskaya, N. S., Belyaev, A. E., Bobyl, A. V., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Novitskiy, C. V., Sheremet, V. N.

Published 2010

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Development of high-stable contact systems to gallium nitride microwave diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis by Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals by Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

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Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis by Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

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Search Results - Ivanov, V.N.

Диоды Ганна из GaAs с катодным контактом, инжектирующим горячие электроны by Ivanov, V. N., Kovtonjuk, V. M., Nikolaenko, Ju. E.

Технология изготовления GaAs-диодов Ганна для диапазона коротких миллимитровых длин волн by Ivanov, V. N., Kovtonyuk, V. M., Nikolaienko, Yu. E.

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices by Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.

Слаботочные диоды Ганна на основе арсенида галлия для КВЧ-аппаратов by Yatsunenko, A. G., Kovtonyk, V. M., Ivanov, V. N., Nikolaenko, Yu. E.

Использование электромагнитного излучения в медицине и требования к построению КВЧ-аппаратов by Yatsunenko, A. G., Kovtonyuk, V. M., Ivanov, V. N., Nikolayenko, Yu. E.

Magnetron sputtered coatings of AlN-TiCrB₂ system by Panasyuk, A.D., Podchernyaeva, I.A., Neshpor, I.P., Gawalek, W., Ivanov, V.N.

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment by Kryshtab, T.G., Lytvyn, P.M., Mazin, M.O., Lytvyn, O.S., Prokopenko, I.V., Ivanov, V.N.

Плазмохимическое травление эпитаксиальных структур нитрида галлия by Borisenko, A. G., Polozov, B. P., Fedorovich, O. A., Boltovets, M. S., Ivanov, V. N., Sveschnikov, Yu. N.

Формирование мезаструктур 4НSiC p–i–n-диодов методом ионно-плазменного травления by Boltovets, M. S., Borisenko, A. G., Ivanov, V. N., Fedorovich, О. А., Krivutsa, V. A., Polozov, B. P.

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide by Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.

Technology and experimental studies of contacts for microwave diodes based on interstitial phases by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs by Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.

Development of high-stable contact systems to gallium nitride microwave diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.

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