Search Results - Ivanov, V.N.
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Magnetron sputtered coatings of AlN-TiCrB₂ system by Panasyuk, A.D., Podchernyaeva, I.A., Neshpor, I.P., Gawalek, W., Ivanov, V.N.
Published in Functional Materials (2009)Get full text
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Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide by Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)Get full text
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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)Get full text
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Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs by Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)Get full text
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On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)Get full text
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Диоды Ганна из InP с катодным контактом, инжектирующим горячие электроны. Ч. 1. Межфазные взаимодействия в катодных контактах... by Boltovets, N. S., Ivanov, V. N., Kovtonyuk, V. M., Rayevskaya, N. S., Belyaev, A. E., Bobyl, A. V., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Novitskiy, C. V., Sheremet, V. N.
Published 2010Get full text
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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers by Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Lytvyn, O.S., Lytvyn, P.M., Vlaskina, S.I., Agueev, O.A., Svetlichny, A.I., Soloviev, S.I., Sudarshan, T.S.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)Get full text
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Development of high-stable contact systems to gallium nitride microwave diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)Get full text
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New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis by Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)Get full text
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Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals by Boltovets, N.S., Basanets, V.V., Ivanov, V.N., Krivutsa, V.A., Tsvir, A.V., Belyaev, A.E., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A., Venger, E.F., Voitsikhovskyi, D.I., Kholevchuk, V.V., Mitin, V.F.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)Get full text
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Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis by Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.
Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)Get full text
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Related Subjects
Gunn diode
диод Ганна
мезаструктура
4NSiC silicon carbide
Technology
cathode contact
diode chip
epitaxial layers
gallium arsenide
gallium nitride
hot electron injection
hot electrons
indium phosphide
ion-plasma etching
mesa structure
mesastructure
ohmic contact
plasma-chemical etching
plasma-chemical reactor
p–i–n-diode
p–i–n-диод
silicon etching
titanium diboride
арсенид галлия
горячие электроны
диборид титана
инжекция горячих электронов
карбид кремния 4НSiC
катодный контакт
нитрид галлия