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Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness by Liubchenko, O.I., Kladko, V.P.

Published in Металлофизика и новейшие технологии (2018)

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Modeling of X-ray rocking curves for layers after two-stage ion-implantation by Liubchenko, O.I., Kladko, V.P., Gudymenko, O.Yo.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)

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Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy by Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2000)

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X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates by Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2013)

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Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study by Strelchuk, V.V., Kladko, V.P., Yefanov, O.M., Kolomys, O.F., Gudymenko, O.I., Valakh, M.Ya.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2005)

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Structure and electrical resistance of the passivating ZnSe layer on Ge by Maslov, V.P., Fedorenko, A.V., Kladko, V.P., Gudymenko, O.Yo., Bozhko, K.M., Zashchepkina, N.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2021)

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Дослідження пасток в гетероструктурах AlGaN/GaN ультразвуковими коливаннями by Kaliuzhnyi, V.V., Liubchenko, O.I., Tymochko, M.D., Olikh, Y.M., Kladko, V.P., Belyaev, A.E.

Published 2021

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X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry by Fodchuk, І.М., Dovganyuk, V.V., Litvinchuk, Т.V., Kladko, V.P., Slobodian, М.V., Gudymenko, O.Yo., Swiatek, Z.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2010)

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Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment by Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Рефлектометричнi дослiдження нанопористих плiвок з масивом наночастинок золота by Kladko, V. P., Gudymenko, O. Y., Kriviy, S. B., Litvin, P. M., Kaganovich, E. B., Krishchenko, I. M., Manoilov, E. G.

Published 2018

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The effect of ion implantation on structural damage in compositionally graded AlGaN layers by Liubchenko, O.I., Kladko, V.P., Stanchu, H.V., Sabov, T.M., Melnik, V.P., Kryvyi, S.B., Belyaev, A.Ye.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2019)

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Особливості зародження та упорядкування GeSi наноострівців у багатошарових структурах, сформованих на Si та Si1-xGex буферних шарах... by Yukhymchuk, V.O., Valakh, M.Ya., Kladko, V.P., Slobodian, M.V., Gudymenko, O.Yo., Krasilnik, Z.F., Novikov, A.V.

Published 2022

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Influence of small miscuts on self-ordered growth of Ge nanoislands by Gudymenko, O.Yo., Kladko, V.P., Yefanov, O.M., Slobodian, M.V., Polischuk, Yu.S., Krasilnik, Z.F., Lobanov, D.V., Novikov, А.А.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2008)

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Investigation of superlattice structure parameters using quasi-forbidden reflections by Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

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Influence of microwave radiation on relaxation processes in silicon carbide by Bacherikov, Yu.Yu., Goroneskul, V.Yu., Gudymenko, O.Yo., Kladko, V.P., Kolomys, O.F., Krishchenko, I.M., Okhrimenko, O.B., Strelchuk, V.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2020)

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Bio-SiC ceramics coated with hydroxyapatite using gas-detonation deposition: An alternative to titanium-based medical implants by Klyui, M.I., Temchenko, V.P., Gryshkov, O.P., Dubok, V.A., Kladko, V.P., Kuchuk, A.V., Dzhagan, V.M., Yukhymchuk, V.O., Kiselov, V.S.

Published in Functional Materials (2013)

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19

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)

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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios by Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Search Results - Kladko, V. P.

Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness by Liubchenko, O.I., Kladko, V.P.

Modeling of X-ray rocking curves for layers after two-stage ion-implantation by Liubchenko, O.I., Kladko, V.P., Gudymenko, O.Yo.

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy by Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.

X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates by Safriuk, N.V., Stanchu, G.V., Kuchuk, A.V., Kladko, V.P., Belyaev, A.E., Machulin, V.F.

Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study by Strelchuk, V.V., Kladko, V.P., Yefanov, O.M., Kolomys, O.F., Gudymenko, O.I., Valakh, M.Ya.

Structure and electrical resistance of the passivating ZnSe layer on Ge by Maslov, V.P., Fedorenko, A.V., Kladko, V.P., Gudymenko, O.Yo., Bozhko, K.M., Zashchepkina, N.M.

Дослідження пасток в гетероструктурах AlGaN/GaN ультразвуковими коливаннями by Kaliuzhnyi, V.V., Liubchenko, O.I., Tymochko, M.D., Olikh, Y.M., Kladko, V.P., Belyaev, A.E.

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures by Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.

Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry by Fodchuk, І.М., Dovganyuk, V.V., Litvinchuk, Т.V., Kladko, V.P., Slobodian, М.V., Gudymenko, O.Yo., Swiatek, Z.

Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment by Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.

Рефлектометричнi дослiдження нанопористих плiвок з масивом наночастинок золота by Kladko, V. P., Gudymenko, O. Y., Kriviy, S. B., Litvin, P. M., Kaganovich, E. B., Krishchenko, I. M., Manoilov, E. G.

The effect of ion implantation on structural damage in compositionally graded AlGaN layers by Liubchenko, O.I., Kladko, V.P., Stanchu, H.V., Sabov, T.M., Melnik, V.P., Kryvyi, S.B., Belyaev, A.Ye.

Influence of small miscuts on self-ordered growth of Ge nanoislands by Gudymenko, O.Yo., Kladko, V.P., Yefanov, O.M., Slobodian, M.V., Polischuk, Yu.S., Krasilnik, Z.F., Lobanov, D.V., Novikov, А.А.

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Sheremet, V.N.

Investigation of superlattice structure parameters using quasi-forbidden reflections by Kladko, V.P., Datsenko, L.I., Korchovyi, A.A., Machulin, V.F., Lytvyn, P.M., Shalimov, A.V., Kuchuk, A.V., Kogutyuk, P.P.

Influence of microwave radiation on relaxation processes in silicon carbide by Bacherikov, Yu.Yu., Goroneskul, V.Yu., Gudymenko, O.Yo., Kladko, V.P., Kolomys, O.F., Krishchenko, I.M., Okhrimenko, O.B., Strelchuk, V.V.

Bio-SiC ceramics coated with hydroxyapatite using gas-detonation deposition: An alternative to titanium-based medical implants by Klyui, M.I., Temchenko, V.P., Gryshkov, O.P., Dubok, V.A., Kladko, V.P., Kuchuk, A.V., Dzhagan, V.M., Yukhymchuk, V.O., Kiselov, V.S.

Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios by Kladko, V.P., Safriuk, N.V., Stanchu, H.V., Kuchuk, A.V., Melnyk, V.P., Oberemok, A.S., Kriviy, S.B., Maksymenko, Z.V., Belyaev, A.E., Yavich, B.S.

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