Borophosphosilicate glass component analysis using secondary neutral mass spectrometry by Oberemok, O., Lytvyn, P.

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AES and XPS characterization of TiN layers formed and modified by ion implantation by Melnik, V., Popov, V., Kruger, D., Oberemok, O.

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Ultrasound effect on radiation damages in boron implanted silicon by Romanjuk, B., Krüger, D., Melnik, V., Popov, V., Olikh, Ya., Soroka, V., Oberemok, O.

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Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology by Klimovskaya, A.I., Kalashnyk, Yu.Yu., Voroshchenko, A.T., Oberemok, O.S., Pedchenko, Yu.M., Lytvyn, P.M.

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Influence of deposition rate and substrate temperature on structure and optical features of NiO thin film by Oberemok, O.S., Sabov, T.M., Lisovskyy, I.P., Khacevych, I.M., Gudymenko, O.Yo., Nikirin, V.A., Voitovych, M.V.

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Formation of silicon nanoclusters in buried ultra-thin oxide layers by Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.

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Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites by Trunov, M.L., Lytvyn, P.M., Nagy, P.M., Oberemok, O.S., Durkot, M.O., Tarnaii, A.A., Prokopenko, I.V., Rubish, V.M.

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Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient by Sabov, T.M., Oberemok, O.S., Dubikovskyi, O.V., Melnik, V.P., Kladko, V.P., Romanyuk, B.M., Popov, V.G., Gudymenko, O.Yo., Safriuk, N.V.

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