Role of dislocations in formation of ohmic contacts to heavily doped n-Si

We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead...

Повний опис

Збережено в:

Бібліографічні деталі
Дата:	2013
Автори:	Belyaev, A.E., Pilipenko, V.A., Anischik, V.M., Petlitskaya, T.V., Klad’ko, V.P., Konakova, R.V., Boltovets, N.S., Korostinskaya, T.V., Kapitanchuk, L.M., Kudryk, Ya.Ya., Vinogradov, A.O., Sheremet, V.N.
Формат:	Стаття
Мова:	English
Опубліковано:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2013
Назва видання:	Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:	http://dspace.nbuv.gov.ua/handle/123456789/117675
Теги:	Додати тег Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:	Role of dislocations in formation of ohmic contacts to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine

id	irk-123456789-117675
record_format	dspace
spelling	irk-123456789-1176752017-05-27T03:02:53Z Role of dislocations in formation of ohmic contacts to heavily doped n-Si Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N. We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that determine the current flow mechanism in these ohmic contacts. The calculated and experimental temperature dependences of contact resistivity, ρс(Т), are in good agreement. It is shown that ρс increases with temperature. This is characteristic of a model of ohmic contacts with a high dislocation density in the near-contact region of semiconductor 2013 Article Role of dislocations in formation of ohmic contacts to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ. 1560-8034 PACS 73.40.Ns; 73.40.Cg, 85.40.-e http://dspace.nbuv.gov.ua/handle/123456789/117675 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution	Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection	DSpace DC
language	English
description	We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that determine the current flow mechanism in these ohmic contacts. The calculated and experimental temperature dependences of contact resistivity, ρс(Т), are in good agreement. It is shown that ρс increases with temperature. This is characteristic of a model of ohmic contacts with a high dislocation density in the near-contact region of semiconductor
format	Article
author	Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N.
spellingShingle	Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N. Role of dislocations in formation of ohmic contacts to heavily doped n-Si Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet	Belyaev, A.E. Pilipenko, V.A. Anischik, V.M. Petlitskaya, T.V. Klad’ko, V.P. Konakova, R.V. Boltovets, N.S. Korostinskaya, T.V. Kapitanchuk, L.M. Kudryk, Ya.Ya. Vinogradov, A.O. Sheremet, V.N.
author_sort	Belyaev, A.E.
title	Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_short	Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_full	Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_fullStr	Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_full_unstemmed	Role of dislocations in formation of ohmic contacts to heavily doped n-Si
title_sort	role of dislocations in formation of ohmic contacts to heavily doped n-si
publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate	2013
url	http://dspace.nbuv.gov.ua/handle/123456789/117675
citation_txt	Role of dislocations in formation of ohmic contacts to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ.
series	Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv	AT belyaevae roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT pilipenkova roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT anischikvm roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT petlitskayatv roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT kladkovp roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT konakovarv roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT boltovetsns roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT korostinskayatv roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT kapitanchuklm roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT kudrykyaya roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT vinogradovao roleofdislocationsinformationofohmiccontactstoheavilydopednsi AT sheremetvn roleofdislocationsinformationofohmiccontactstoheavilydopednsi
first_indexed	2023-10-18T20:30:21Z
last_indexed	2023-10-18T20:30:21Z
_version_	1796150376774238208

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Репозитарії

Схожі ресурси