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Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10⁹ rad. It is shown that all changes in the current-volta...

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Bibliographic Details
Main Authors: Belyaev, A.A., Belyaev, A.E., Konakova, R.V., Vitusevich, S.A., Milenin, V.V., Soloviev, E.A., Kravchenko, L.N., Figielski, T., Wosinski, T., Makosa, A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/117928
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http://dspace.nbuv.gov.ua/handle/123456789/117928

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