Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-...

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Дата:2001
Автори: Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119331
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119331
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spelling irk-123456789-1193312017-06-07T03:03:56Z Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment. 2001 Article Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.76.C, 73.40.K, 84.40 http://dspace.nbuv.gov.ua/handle/123456789/119331 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment.
format Article
author Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
spellingShingle Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
author_sort Konakova, R.V.
title Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_short Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_full Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_fullStr Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_full_unstemmed Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_sort ordering of lateral nonuniformity of tibx film and transition layer in the tibx-gaas system
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2001
url http://dspace.nbuv.gov.ua/handle/123456789/119331
citation_txt Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:34:18Z
last_indexed 2023-10-18T20:34:18Z
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