Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-...
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Дата: | 2001 |
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Автори: | , , , , , , , , |
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Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119331 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. |
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irk-123456789-1193312017-06-07T03:03:56Z Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment. 2001 Article Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.76.C, 73.40.K, 84.40 http://dspace.nbuv.gov.ua/handle/123456789/119331 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment. |
format |
Article |
author |
Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. |
spellingShingle |
Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. |
author_sort |
Konakova, R.V. |
title |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
title_short |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
title_full |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
title_fullStr |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
title_full_unstemmed |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
title_sort |
ordering of lateral nonuniformity of tibx film and transition layer in the tibx-gaas system |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2001 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/119331 |
citation_txt |
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
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first_indexed |
2023-10-18T20:34:18Z |
last_indexed |
2023-10-18T20:34:18Z |
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